Lyutovich, K., Ernst, F., Banhart, F., Silier, I., Gutjahr, A., & Konuma, M.(1997).Defect Distribution in Compositionally-Graded EpitaxialSiGeLayers on Si Substrates. Inst. Phys. Conf. Ser., 157(), 131–134.
Kienzle, O., & Ernst, F.(1997).Effect of Shear Stress on the Atomistic Structure of a Grain Boundary in Strontium Titanate. Journal of the American Ceramic Society, 80(), 1639–1644.
Ernst, F.(1997).Interface Dislocations Forming in GeSi Layers During Epitaxy on {111} Si Substrates at High Temperatures. Materials Science and Engineering A, 233(), 126–138.
Schweinfest, R., Gemming, T., Kopold, P., Ernst, F., & Rühle, M.(1997).Measurement of Tridentate Astigmatism of a Conventional HRTEM and a high-vacuum HRTEM. European Journal of Cell Biology, 74(), 78-78.
Klement, U., Horst, D., & Ernst, F.(1997).Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properties. , 452(), 925–930.
Kienzle, O., Exner, M., & Ernst, F.(1997).Analysis of Interface Structures by Quantitative High-Resolution Transmission Electron Microscopy. , 466(), 95-106.
Ernst, F., & Rühle, M.(1997).Present Developments in High-Resolution Transmission Electron Microscopy. Current Opinion in Solid State & Material Science, 2(), 469-476.
Recnik, A., Langjahr, P., & Ernst, F.(1997).Structural Characterization of SrZrO3/SrTiO3 Epitaxial Layers by HRTEM. Journal of Computer-Assisted Microscopy, 9(), 35–36.
Nadarzinski, K., Kienzle, O., & Ernst, F.(1997).Analysis of Interface Structures by Quantitative High-Resolution Transmission Electron Microscopy. San Francisco Press Inc.,().