Bruley, J., Stemmer, S., Ernst, F., Rühle, M., Hsu, W., & Nataraj, R.(1994).Nanostructure and Chemistry of a (100)MgO/(100)GaAs Interface. Applied Physics Letters, 65(), 564–566.
Tzou, Y., Bruley, J., Ernst, F., Rühle, M., & Nataraj, R.(1994).Nucleation of Special Orientations During Heteroepitaxial Growth of Diamond on Silicon. , 317(), 517–522.
Wolf, U., Ernst, F., Muschik, T., Finnis, M., & Fischmeister, H.(1992).The Influence of Grain Boundary Inclination on the Structure and Energy of 3 Grain Boundaries in Copper. Philosophical Magazine A, 66(), 991–1016.
Wolf, U., Ernst, F., Muschik, T., Finnis, M., & Fischmeister, H.(1992).The Influence of Grain Boundary Inclination on the Structure and Energy of 3 Twin Boundaries in Copper. Mat. Res. Soc. Sym. Proc., 238(), 177–182.
Ernst, F., Finnis, M., Hofmann, D., Muschik, T., Schönberger, U., Wolf, U., ... Methfessel, M.(1992).Theoretical Prediction and Direct Observation of the 9R Structure in Ag. Physical Review Letters, 69(), 620–623.
Hansson, P., & Ernst, F.(1992).Two-Dimensional Growth of Strained Ge0.85Si0.15 on Si (111) by Liquid Phase Epitaxy. Journal of Applied Physics, 72(), 2083–2085.
Mobus, G., Hohenstein, M., Phillipp, F., Ernst, F., Necker, G., & Rühle, M.(1992).A Procedure to Measure the Chromatic Contrast Transfer Envelope of High-Resolution Electron Microscopes. Universidad de Granada,().
Weronek, K., Weber, J., Höpner, A., Ernst, F., Buchner, R., Stefaniak, M., ... Alexander, H.(1992).Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon. Materials Science Forum, 83–87(), 1315–1320.
Bruley, J., Ernst, F., & Ljutovich, K.(1992).Germanium Concentration Profiles Across Interfaces and Close to Dislocations in CVD Si1-xGex-on-Si Junctions. , 238(), 469–474.
Pirouz, P., Yang, J., Powell, J., & Ernst, F.(1991).The Role of Dislocations in the 3C6H SiC Polytypic Transformation. Inst. Phys. Conf. Ser. No., 117(3)(), 149–154.
