Pirouz Pirouz

Professor Emeritus, Materials Science and Engineering
Optimizes semiconductors, electron microscopy, mechanisms of twinning and metal-ceramic interfaces
Office: 404 White Phone Number: (216) 368-6486 Fax Number: (216) 368-3209 Email: pirouz.pirouz@case.edu

Education

, , Laboratoire de Thermodynamique et Physico-Chimie Metallurgique, Ecole Nationale Superieure d'Electrochimie et d'Electrometallurgie, Institut Nationale Polytechnique de Grenoble, 1974
Ph.D., Metallurgy and Materials Science, Imperial College of Science and Technology University of London, 1973
B.S., Metallurgy and Materials Science, Imperial College of Science and Technology, University of London, 1969

Research Interests

Relation between electronic and mechanical properties of semiconductors and covalent ceramics; Contrast theory in conventional and high-resolution electron microscopy; Dislocation theory; Defects in semiconductors; Twinning and polytypic transformations in semiconductors; Heteroepitaxial growth of semiconductors; Growth of diamond; Metal/ceramic and ceramic/ceramic interfaces; Fundamentals of Epitaxy; MOCVD growth of wide bandgap semiconductors (SiC and III-Nitrides).

Teaching Interests

Electronic and Optical Properties of Materials; Electron Diffraction and Imaging; Dislocations in Crystals; Interfaces and Grain Boundaries in Crystalline Materials; Epitaxial orientation relationship; Phase Transformations

Publications

Pirouz, P. (2014). Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth. Materials Express, 4 (1), 41-53.
Cowen, J., Lucas, L., Ernst, F., Pirouz, P., Hepp, A., & Bailey, S. (2005). Liquid-Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide. Materials Science and EngineeringB, 116 , 311-319.
Pirouz, P., Ernst, F., & Ikuhara, Y. (1998). On Epitaxy and Orientation Relationship in Bicrystals. Diffusion and Defect Data Part B,, 59–60 , 51–62.
Ernst, F., Pirouz, P., & Bauser, E. (1992). Lattice Mismatch Accommodation at GeSi/(111)Si Interfaces\ Grown by Liquid Phase Epitaxy. Physica Status Solidi (a), 131 , 651–662.
Pirouz, P., Yang, J., Powell, J., & Ernst, F. (1991). The Role of Dislocations in the 3C6H SiC Polytypic Transformation. Inst. Phys. Conf. Ser. No., 117(3) , 149–154.
Ernst, F., & Pirouz, P. (1989). The Formation Mechanism of Planar Defects in Compound Semiconductors Grown Epitaxially on {100} Silicon Substrates. Journal of Materials Research, 4 , 834–842.
Pirouz, P., Yang, J., Ernst, F., & Möller, H. (1988). Hexagonal Silicon: A New HREM Study. , 139 , 199–204.
Ernst, F., & Pirouz, P. (1988). Formation of Planar Defects in the Epitaxial Growth of GaP on Si Substrate by MOCVD. Journal of Applied Physics, 64 , 4526–4530.
Cheng, T., Pirouz, P., & Ernst, F. (1988). Inversion Domain Boundary Dislocations in Heteroepitaxial Films. , 144 , 189–194.
Pirouz, P., Ernst, F., & Cheng, T. (1988). Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation. , 116 , 57–70.