Full bandgap defect state characterization of ß -Ga 2 O 3 grown by metal organic chemical vapor deposition Read more about Full bandgap defect state characterization of ß -Ga 2 O 3 grown by metal organic chemical vapor deposition
Phase transformation in MOCVD growth of (Al x Ga 1-x ) 2 O 3 thin films Read more about Phase transformation in MOCVD growth of (Al x Ga 1-x ) 2 O 3 thin films
Deep level defects and cation sublattice disorder in ZnGeN 2 Read more about Deep level defects and cation sublattice disorder in ZnGeN 2
A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (Al x Ga 1-x ) 2 O 3 Read more about A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (Al x Ga 1-x ) 2 O 3
Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN 2 films grown on GaN by metalorganic chemical vapor deposition Read more about Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN 2 films grown on GaN by metalorganic chemical vapor deposition
Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) ß-Ga 2 O 3 Read more about Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) ß-Ga 2 O 3
Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence Read more about Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence
High-temperature low-pressure chemical vapor deposition of ß-Ga 2 O 3 Read more about High-temperature low-pressure chemical vapor deposition of ß-Ga 2 O 3
MOCVD growth of ß-phase (Al x Ga 1-x ) 2 O 3 on ( 2 ¯01) ß-Ga 2 O 3 substrates Read more about MOCVD growth of ß-phase (Al x Ga 1-x ) 2 O 3 on ( 2 ¯01) ß-Ga 2 O 3 substrates
MOCVD Epitaxy of Ultrawide Bandgap ß-(Al x Ga 1 x ) 2 O 3 with High-Al Composition on (100) ß-Ga 2 O 3 Substrates Read more about MOCVD Epitaxy of Ultrawide Bandgap ß-(Al x Ga 1 x ) 2 O 3 with High-Al Composition on (100) ß-Ga 2 O 3 Substrates
