Zixuan Feng

Ghadi, H., McGlone, J., Feng, Z., Bhuiyan, A., Zhao, H., Arehart, A., & Ringel, S. (2020). Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown ß -Ga 2 O 3. Applied Physics Letters, 117 (17).

Anhar Uddin Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H. (2020). MOCVD Epitaxy of Ultrawide Bandgap ß-(Al x Ga 1 x ) 2 O 3 with High-Al Composition on (100) ß-Ga 2 O 3 Substrates. Crystal Growth and Design, 20 (10), 6722-6730.

Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H. (2020). MOCVD growth of ß-phase (Al x Ga 1-x ) 2 O 3 on ( 2 ¯01) ß-Ga 2 O 3 substrates. Applied Physics Letters, 117 (14).

Zhang, Y., Feng, Z., Karim, M., & Zhao, H. (2020). High-temperature low-pressure chemical vapor deposition of ß-Ga 2 O 3. Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 38 (5).

Feng, Z., Bhuiyan, A., Xia, Z., Moore, W., Chen, Z., McGlone, J., Daughton, D., Arehart, A., Ringel, S., Rajan, S., & Zhao, H. (2020). Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) ß-Ga 2 O 3. Physica Status Solidi - Rapid Research Letters, 14 (8).

Sarker, J., Broderick, S., Bhuiyan, A., Feng, Z., Zhao, H., & Mazumder, B. (2020). A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (Al x Ga 1-x ) 2 O 3. Applied Physics Letters, 116 (15).

Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Sarker, J., Zhu, M., Karim, M., Mazumder, B., Hwang, J., & Zhao, H. (2020). Phase transformation in MOCVD growth of (Al x Ga 1-x ) 2 O 3 thin films. APL Materials, 8 (3).

Ghadi, H., McGlone, J., Jackson, C., Farzana, E., Feng, Z., Bhuiyan, A., Zhao, H., Arehart, A., & Ringel, S. (2020). Full bandgap defect state characterization of ß -Ga 2 O 3 grown by metal organic chemical vapor deposition. APL Materials, 8 (2).

Karim, M., Jayatunga, B., Feng, Z., Kash, K., & Zhao, H. (2019). Metal�Organic Chemical Vapor Deposition Growth of ZnGeN 2 Films on Sapphire. Crystal Growth and Design, 19 (8), 4661-4666.

Feng, Z., Anhar Uddin Bhuiyan, A., Karim, M., & Zhao, H. (2019). MOCVD homoepitaxy of Si-doped (010) �-Ga 2 O 3 thin films with superior transport properties. Applied Physics Letters, 114 (25).

Zhang, Y., Karim, M., Feng, Z., & Zhao, H. (2019). Ultrafast growth rate and high mobility In 2 O 3 films grown on c-sapphire via low pressure chemical vapor deposition. Journal of Applied Physics, 125 (13).

Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H. (2019). Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates. Crystal Growth and Design, 19 (3), 1965-1972.

Feng, Z., Karim, M., & Zhao, H. (2019). Low pressure chemical vapor deposition of �-Ga 2 O 3 thin films: Dependence on growth parameters. APL Materials, 7 (2).

Karim, M., Feng, Z., & Zhao, H. (2018). Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In 2 O 3 Films. Crystal Growth and Design, 18 (8), 4495-4502.

Feng, Z., Rafique, S., Cai, Y., Han, L., Huang, M., & Zhao, H. (2018). ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration. ECS Journal of Solid State Science and Technology, 7 (7), Q3114-Q3119.

Feng, Z., Rafique, S., Cai, Y., Han, L., Huang, M., & Zhao, H. (2018). ZnO Nanowall Networks for Sensor Devices: From Hydrothermal Synthesis to Device Demonstration. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 7 (7), Q3114-Q3119.

Publications