EECS500 Fall 2016 Department Colloquium

Timothy Peshek
Overcoming Thermokinetic, Electronic and Cultural Barriers to Support Wide Band Gap Semiconductor World Dominance
White 411
September 22, 2016

My research interests are in the prediction of materials behavior using physics and data science, and here I will discuss a snapshot of research efforts in predictive performance and synthesis of some common wide band gap semiconductors.  Most notably, GaN, the quintessential wide gap III-V, will be discussed from an application standpoint, thin film transistors on silicon, and how we’ve invoked thermochemistry to predict the phase space for ideal growth.  I will discuss how data mining the literature led to two competing issues, that prediction of stability based upon thermodynamics were directly contradicted by the device fabrication community, and how reports of the measurements of the thermochemical state functions were erroneous because no one translated the primary source. Then I will invoke a much more complicated system to demonstrate the difficulty in predictive synthesis far from equilibrium in indium-tin-oxide and demonstrate the utility of data science approaches.


Dr. Timothy Peshek is a Research Assistant Professor of Materials Science and Engineering at Case Western Reserve University in Cleveland, Ohio.  Dr. Peshek is affiliated with the Solar Durability and Lifetime Extension (SDLE) Center.  Dr. Peshek's research interests include predictive materials behavior and synthesis including physics-guided and data-driven multivariate modeling and informatics, wide band gap semiconductor performance and synthesis modeling and design, power electronics design, semiconductor device physics, and thin film deposition. Dr. Peshek's prior research included development and long term reliability of a microinverter for photovoltaics, and semiconductor materials research for earth- abundant thin film photovoltaics at Arizona State University and the National Renewable Energy Laboratory.