EECS Research Team (Te-Hao Li, Swarup Bhunia, Mehran Mehregany) publishes in Science Magazine (Sept. 2010)

"Electromechanical Computing at 500°C with Silicon Carbide"

nanoelectromechanical switchLogic circuits capable of operating at high temperatures can alleviate expensive heat-sinking and thermal-management requirements of modern electronics and are enabling for advanced propulsion systems. Replacing existing complementary metal-oxide semiconductor field-effect transistors with silicon carbide (SiC) nanoelectromechanical system (NEMS) switches is a promising approach for low-power, high-performance logic operation at temperatures higher than 300°C, beyond the capability of conventional silicon technology. These switches are capable of achieving virtually zero off-state current, microwave operating frequencies, radiation hardness, and nanoscale dimensions. Here, we report a microfabricated electromechanical inverter with SiC complementary NEMS switches capable of operating at 500°C with ultralow leakage current.

CWRU think article