header-about

EECS500 Fall 2014 Department Colloquium

Presenter: 
Phil Neudeck
Title: 
NASA Experiments in 4H-SiC JFET Extreme Temperature Integrated Circuit Technology
Affiliation: 
NASA
Location: 
White 411
Time: 
11:30am-12:30pm
Date: 
October 2, 2014

The ability to operate uncooled electronic integrated circuits reliably for prolonged time periods in hot environments is sought as a beneficial enabling technology for aerospace, deep-well drilling, automotive and other applications [1]. The NASA Glenn Research Center has demonstrated prolonged and stable packaged operation of very simple (< 5 transistors) 6H-SiC junction field-effect transistor (JFET) integrated circuits (ICs) for thousands of hours at 500 °C in air ambient [2,3]. Others have demonstrated more complicated SiC ICs, but without reporting thousands of hours of stable electrical operation at 500 °C. This presentation overviews NASA’s on-going efforts to realize more complicated ICs (>100 transistors/chip) with prolonged and stable circuit operation at temperatures as high as 500 °C. Past and present obstacles along this technology development path will be discussed. In addition, the presentation will also survey some of the alternative technology paths being developed at other laboratories towards implementing beneficial extreme temperature IC capability.

[1]  P. G. Neudeck, R. S. Okojie, and L. Y. Chen, IEEE Proc. vol. 90, p. 1065, (2002).
[2]  D. J. Spry et al., Materials Science Forum vols. 600-603, p. 1079 (2008).
[3]  P. G. Neudeck et al., Physica Status Solidi A vol. 206, p. 2329 (2009).

Biography: 

Phil Neudeck is the lead semiconductor electronic device engineer of the Smart Sensors and Electronics Systems Branch at NASA Glenn Research Center in Cleveland, Ohio. He is primarily responsible for overseeing the design, modeling, fabrication, and electrical characterization of a wide variety of prototype silicon carbide electronic devices being developed for high-temperature or high power operation in aerospace-related systems. He has co-authored over 100 technical publications on silicon carbide semiconductor devices and crystal growth. He completed his Ph.D. in Electrical Engineering at Purdue Univeristy in 1991, and is a Senior Member of the IEEE.