Schmidt, O., Denker, U., Dashiell, M., Jin, N., Phillipp, F., Eberl, K., Schreiner, R., Gräbeldinger, H., Schweizer, H., Christiansen, S., & Ernst, F.(2002).Laterally Aligned Ge/Si Islands: A New Concept for Faster Field-Effect Transistors.Materials Science and Engineering B,89, 101–105.
Schmidt, O., Denker, U., Eberl, K., Kienzle, O., Ernst, F., & Haug, R.(2001).Resonant Tunneling Diodes Based on Stacked Self-Assembled Ge/Si Islands.Applied Physics Letters,77, 4341–4343.
Schmidt, O., Denker, U., Eberl, K., Kienzle, O., & Ernst, F.(2000).Effect of Overgrowth Temperature on the Photoluminescence of Ge/Si Islands.Applied Physics Letters,77, 2509–2511.
Schmidt, O., Eberl, K., Kienzle, O., Ernst, F., Christiansen, S., & Strunk, H.(2000).Reduced Critical Thickness and Photoluminescence Line Splitting in Multiple Layers of Self-Assembled Ge/Si Islands.Materials Science and Engineering B,74, 248–252.
Eberl, K., Schmidt, O., Kienzle, O., & Ernst, F.(2000).Preparation and Optical Properties of Ge and C-induced Ge Dots on Si.Thin Solid Films,373, 164-169.
Eberl, K., Schmidt, O., Duschl, R., Kienzle, O., Ernst, F., & Rau, Y.(2000).Self-Assembling SiGe and SiGeC Nanostructures for Light Emitters and Tunneling Diodes.Thin Solid Films,369, 33–38.
Eberl, K., Schmidt, O., Kienzle, O., & Ernst, F.(2000).Preparation and Optical Properties of Ge and C-induced Ge Dots on Si.Mat. Res. Soc. Sym. Proc.,571, 355–362.
Stangl, J., Roch, T., Bauer, G., Kegel, I., Metzger, T., Schmidt, O., Eberl, K., Kienzle, O., & Ernst, F.(2000).Vertical Correlation of SiGe Islands in SiGe–Si Superlattices: X-ray Diffraction Versus Transmission Electron Microscopy.Applied Physics Letters,77, 3953-3955.
Schmidt, O., Kienzle, O., Schuler, H., Zundel, M., Lange, C., Eberl, K., Ernst, F., & Hao, Y.(1999).Critical Thickness Reduction in Stacked Layers of Vertically Aligned Stranski–Krastanov Grown Islands.Physical Review Letters.
Eberl, K., Schmidt, O., Kienzle, O., & Ernst, F.(1999).Self-Assembling Si/SiGe Nanostructures for Light Emitters.Diffusion & Defect Data B: Solid State Phenomena,69–70, 13–21.
Kienzle, O., Ernst, F., Rühle, M., Schmidt, O., & Eberl, K.(1999).Germanium “Quantum Dots” Embedded in Silicon: Quantitative TEM Study of Self-Alignment and Coarsening.Applied Physics Letters,74, 269–271.
Schmidt, O., Kienzle, O., Hao, Y., Eberl, K., & Ernst, F.(1999).Modified Stranski–Krastanov Growth in Stacked Layers of Self-Assembled Islands.Applied Physics Letters,74, 1272–1274.
Wöhl, G., Schöllhorn, C., Schmidt, O., Brunner, K., Eberl, K., Kienzle, O., & Ernst, F.(1998).Characterization of Self-Assembled Ge Islands on Si (100) by Atomic Force Microscopy and Transmission Electron Microscopy.Thin Solid Films,321, 86–91.
Schmidt, O., Lange, C., Eberl, K., Kienzle, O., & Ernst, F.(1998).C-Induced Ge Dots: A Versatile Tool to Fabricate Ultra-Small Ge Nanostructures.Thin Solid Films,336, 248–251.
Schmidt, O., Lange, C., Eberl, K., Kienzle, O., & Ernst, F.(1998).Influence of Pre-Grown Carbon on the Formation of Germanium Dots.Thin Solid Films,321, 70–75.
