Md Rezaul Karim

Publications

Zhang, Y., Feng, Z., Karim, M., & Zhao, H. (2020). High-temperature low-pressure chemical vapor deposition of ß-Ga 2 O 3. Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 38 (5).
Karim, M., Jayatunga, B., Zhu, M., Lalk, R., Licata, O., Mazumder, B., Hwang, J., Kash, K., & Zhao, H. (2020). Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN 2 films grown on GaN by metalorganic chemical vapor deposition. AIP Advances, 10 (6).
Haseman, M., Karim, M., Ramdin, D., Noesges, B., Feinberg, E., Jayatunga, B., Lambrecht, W., Zhu, M., Hwang, J., Kash, K., Zhao, H., & Brillson, L. (2020). Deep level defects and cation sublattice disorder in ZnGeN 2. Journal of Applied Physics, 127 (13).
Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Sarker, J., Zhu, M., Karim, M., Mazumder, B., Hwang, J., & Zhao, H. (2020). Phase transformation in MOCVD growth of (Al x Ga 1-x ) 2 O 3 thin films. APL Materials, 8 (3).
Jayatunga, B., Karim, M., Lalk, R., Ohanaka, O., Lambrecht, W., Zhao, H., & Kash, K. (2020). Metal–Organic Chemical Vapor Deposition of ZnGeGa 2 N 4. Crystal Growth and Design, 20 (1), 189-196.
Karim, M., Jayatunga, B., Feng, Z., Kash, K., & Zhao, H. (2019). Metal�Organic Chemical Vapor Deposition Growth of ZnGeN 2 Films on Sapphire. Crystal Growth and Design, 19 (8), 4661-4666.
Feng, Z., Anhar Uddin Bhuiyan, A., Karim, M., & Zhao, H. (2019). MOCVD homoepitaxy of Si-doped (010) �-Ga 2 O 3 thin films with superior transport properties. Applied Physics Letters, 114 (25).
Feng, Z., Anhar Uddin Bhuiyan, A., Karim, M., & Zhao, H. (2019). MOCVD homoepitaxy of Si-doped (010) �-Ga 2 O 3 thin films with superior transport properties. Applied Physics Letters, 114 (25).
Zhang, Y., Karim, M., Feng, Z., & Zhao, H. (2019). Ultrafast growth rate and high mobility In 2 O 3 films grown on c-sapphire via low pressure chemical vapor deposition. Journal of Applied Physics, 125 (13).
Zhang, Y., Karim, M., Feng, Z., & Zhao, H. (2019). Ultrafast growth rate and high mobility In 2 O 3 films grown on c-sapphire via low pressure chemical vapor deposition. Journal of Applied Physics, 125 (13).
Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H. (2019). Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates. Crystal Growth and Design, 19 (3), 1965-1972.
Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H. (2019). Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates. Crystal Growth and Design, 19 (3), 1965-1972.
Feng, Z., Karim, M., & Zhao, H. (2019). Low pressure chemical vapor deposition of �-Ga 2 O 3 thin films: Dependence on growth parameters. APL Materials, 7 (2).
Feng, Z., Karim, M., & Zhao, H. (2019). Low pressure chemical vapor deposition of �-Ga 2 O 3 thin films: Dependence on growth parameters. APL Materials, 7 (2).
Karim, M., Feng, Z., & Zhao, H. (2018). Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In 2 O 3 Films. Crystal Growth and Design, 18 (8), 4495-4502.
Zheng, X., Lee, J., Rafique, S., Karim, M., Han, L., Zhao, H., & Zorman, C. (2018). Ga 2 O 3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection. IEEE Electron Device Letters, 39 (8), 1230-1233.
Karim, M., & Zhao, H. (2018). Design of InGaN-ZnSnN 2 quantum wells for high-efficiency amber light emitting diodes. Journal of Applied Physics, 124 (3).
Gao, H., Muralidharan, S., Pronin, N., Karim, M., White, S., Asel, T., Foster, G., Krishnamoorthy, S., Rajan, S., Cao, L., Higashiwaki, M., Von Wenckstern, H., Grundmann, M., Zhao, H., Look, D., & Brillson, L. (2018). Optical signatures of deep level defects in Ga 2 O 3. Applied Physics Letters, 112 (24).
Rafique, S., Karim, M., Johnson, J., Hwang, J., & Zhao, H. (2018). LPCVD homoepitaxy of Si doped �-Ga 2 O 3 thin films on (010) and (001) substrates. Applied Physics Letters, 112 (5).
Zheng, X., Lee, J., Rafique, S., Karim, M., Han, L., Zhao, H., & Zorman, C. (2018). beta-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection. IEEE ELECTRON DEVICE LETTERS, 39 (8), 1230-1233.