Anhar Uddin Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H.(2020).MOCVD Epitaxy of Ultrawide Bandgap ß-(Al x Ga 1 x ) 2 O 3 with High-Al Composition on (100) ß-Ga 2 O 3 Substrates.Crystal Growth and Design,20(10),6722-6730.
Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H.(2020).MOCVD growth of ß-phase (Al x Ga 1-x ) 2 O 3 on ( 2 ¯01) ß-Ga 2 O 3 substrates.Applied Physics Letters,117(14).
Karim, M., Jayatunga, B., Zhu, M., Lalk, R., Licata, O., Mazumder, B., Hwang, J., Kash, K., & Zhao, H.(2020).Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN 2 films grown on GaN by metalorganic chemical vapor deposition.AIP Advances,10(6).
Haseman, M., Karim, M., Ramdin, D., Noesges, B., Feinberg, E., Jayatunga, B., Lambrecht, W., Zhu, M., Hwang, J., Kash, K., Zhao, H., & Brillson, L.(2020).Deep level defects and cation sublattice disorder in ZnGeN 2.Journal of Applied Physics,127(13).
Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Sarker, J., Zhu, M., Karim, M., Mazumder, B., Hwang, J., & Zhao, H.(2020).Phase transformation in MOCVD growth of (Al x Ga 1-x ) 2 O 3 thin films.APL Materials,8(3).
Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H.(2019).Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates.Crystal Growth and Design,19(3),1965-1972.
Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H.(2019).Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates.Crystal Growth and Design,19(3),1965-1972.
Rafique, S., Karim, M., Johnson, J., Hwang, J., & Zhao, H.(2018).LPCVD homoepitaxy of Si doped �-Ga 2 O 3 thin films on (010) and (001) substrates.Applied Physics Letters,112(5).
