Anhar Uddin Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H.(2020).MOCVD Epitaxy of Ultrawide Bandgap ß-(Al x Ga 1 x ) 2 O 3 with High-Al Composition on (100) ß-Ga 2 O 3 Substrates.Crystal Growth and Design,20(10),6722-6730.
Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H.(2020).MOCVD growth of ß-phase (Al x Ga 1-x ) 2 O 3 on ( 2 ¯01) ß-Ga 2 O 3 substrates.Applied Physics Letters,117(14).
Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Sarker, J., Zhu, M., Karim, M., Mazumder, B., Hwang, J., & Zhao, H.(2020).Phase transformation in MOCVD growth of (Al x Ga 1-x ) 2 O 3 thin films.APL Materials,8(3).
Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H.(2019).Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates.Crystal Growth and Design,19(3),1965-1972.
Karim, M., Feng, Z., Johnson, J., Zhu, M., Hwang, J., & Zhao, H.(2019).Low-Pressure Chemical Vapor Deposition of In 2 O 3 Films on Off-Axis c-Sapphire Substrates.Crystal Growth and Design,19(3),1965-1972.
Rafique, S., Karim, M., Johnson, J., Hwang, J., & Zhao, H.(2018).LPCVD homoepitaxy of Si doped �-Ga 2 O 3 thin films on (010) and (001) substrates.Applied Physics Letters,112(5).
