Anhar Uddin Bhuiyan, A., Feng, Z., Johnson, J., Huang, H., Hwang, J., & Zhao, H.(2020).MOCVD Epitaxy of Ultrawide Bandgap ß-(Al x Ga 1 x ) 2 O 3 with High-Al Composition on (100) ß-Ga 2 O 3 Substrates.Crystal Growth and Design,20(10),6722-6730.
Feng, Z., Anhar Uddin Bhuiyan, A., Karim, M., & Zhao, H.(2019).MOCVD homoepitaxy of Si-doped (010) �-Ga 2 O 3 thin films with superior transport properties.Applied Physics Letters,114(25).
Feng, Z., Anhar Uddin Bhuiyan, A., Karim, M., & Zhao, H.(2019).MOCVD homoepitaxy of Si-doped (010) �-Ga 2 O 3 thin films with superior transport properties.Applied Physics Letters,114(25).
